AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition
نویسندگان
چکیده
AlN/GaN double-barrier resonant tunneling diodes RTDs were grown by metal-organic chemical vapor deposition on sapphire. RTDs were fabricated via standard processing steps. RTDs demonstrate a clear negative differential resistance NDR at room temperature RT . The NDR was observed around 4.7 V with a peak current density of 59 kA /cm2 and a peak-to-valley ratio of 1.6 at RT. Dislocation-free material is shown to be the key for the performance of GaN RTDs. © 2010 American Institute of Physics. doi:10.1063/1.3294633
منابع مشابه
Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature
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